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| NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2103NV SOP-8 PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 30 -30 RDS(ON) 21m 35m ID 7A -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range Lead Temperature ( /16" from case for 10 sec.) 1 1 SYMBOL VDS VGS N-Channel P-Channel 30 20 7 6 28 2 1.3 -55 to 150 275 -30 20 -6 -5 -24 UNITS V V TC = 25 C TC = 70 C TC = 25 C TC = 70 C ID IDM PD Tj, Tstg TL A W C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 SYMBOL RJA TYPICAL MAXIMUM 62.5 UNITS C / W Pulse width limited by maximum junction temperature. Duty cycle 1% ELECTRICAL CHARACTERISTICS (TC = 25 C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A VGS = 0V, ID = -250A Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A VDS = VGS, ID = -250A N-Ch P-Ch N-Ch P-Ch 30 -30 0.8 -0.8 1.5 -1.5 2.5 -2.5 V MIN TYP MAX UNIT 1 OCT-22-2003 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2103NV SOP-8 VDS = 0V, VGS = 20V Gate-Body Leakage IGSS VDS = 0V, VGS = 20V VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V Zero Gate Voltage Drain Current IDSS N-Ch P-Ch N-Ch P-Ch 100 100 1 -1 10 -10 28 -24 21 44 14 28 8 7 32 60 nA VDS = 20V, VGS = 0V, TJ = 55 C N-Ch VDS = -20V, VGS = 0V, TJ = 55 C P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch A On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V VDS =-5V, VGS = -10V VGS = 4.5V, ID = 6A A Drain-Source Resistance1 On-State VGS = -4.5V, ID = -5A RDS(ON) VGS = 10V, ID = 7A VGS = -10V, ID = -6A m 21 35 Forward Transconductance1 gfs VDS = 10V, ID = 5A VDS = -10V, ID = -5A S DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge2 Gate-Source Charge2 Gate-Drain Charge2 Ciss Coss Crss Qg Qgs Qgd N-Ch N-Channel VGS = 0V, VDS = 10V, f = 1MHz P-Channel P-Ch N-Ch P-Ch P-Ch N-Channel VDS = 0.5V(BR)DSS, VGS = 10V, ID = 6A P-Channel VDS = 0.5V(BR)DSS, VGS = -10V, ID = -5A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 1700 970 380 370 260 180 40 28 28 6 12 12 nC pF VGS = 0V, VDS = -10V, f = 1MHz N-Ch 2 OCT-22-2003 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2103NV SOP-8 Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 td(on) tr td(off) tf N-Channel VDS = 15V ID 1A, VGS = 10V, RGEN = 6 P-Channel VDS = -15V, RL = 1 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch 20 20 10 17 120 160 35 75 nS ID -1A, VGS = -10V, RGEN = 6 P-Ch SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 C) Continuous Current IS N-Ch P-Ch N-Ch P-Ch IF = 1A, VGS = 0V VSD IF = -1A, VGS = 0V Reverse Recovery Time trr IF = 5A, dlF/dt = 100A / S IF = -5A, dlF/dt = 100A / S Reverse Recovery Charge 1 2 3 -3 6 -6 1 -1 15.5 15.5 7.9 7.9 V A Pulsed Current 3 ISM Forward Voltage1 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch nS Qrr nC Pulse test : Pulse Width 300 sec, Duty Cycle 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH "P2103NV", DATE CODE or LOT # 3 OCT-22-2003 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2103NV SOP-8 N-CHANNEL 4 OCT-22-2003 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2103NV SOP-8 5 OCT-22-2003 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2103NV SOP-8 P-CHANNEL 6 OCT-22-2003 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2103NV SOP-8 7 OCT-22-2003 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2103NV SOP-8 SOIC-8 (D) MECHANICAL DATA mm Min. 4.8 3.8 5.8 0.38 Typ. 4.9 3.9 6.0 0.445 1.27 1.35 0.1 1.55 0.175 1.75 0.25 Max. 5.0 4.0 6.2 0.51 mm Min. 0.5 0.18 Typ. 0.715 0.254 0.22 0 4 8 Max. 0.83 0.25 Dimension A B C D E F G Dimension H I J K L M N 8 OCT-22-2003 |
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